*RF5L08350CB4_rev1_0 ONE SIDE
*8/12/2022
*STMicroelectronics 
*Terminals 1 = GATE , 10 = Drain , 11 = Source
*
.SUBCKT  STAC1011_500N_OneSide 1 10 11
C4    1  11     2.8P
L1    1  2    .130N,R=7mohm
C1    2  11     30P
L2    2  3     .235N,R=14mohm
C2    3  11     72P
L3    3  4    .506N,R=19mohm
RG    4  5     .1ohm
CISS  5  7     114P
CRSS  5  9     1.14P
L11    7  11     0.01N
C3    7  11     .1P
R1     9  6     100K
L5    9  10     .124N,R=3mohm
C5   10  11     2.8P
MOS   6  5  7  7     mos_IDEV09115  L=1UM W=115mM 
JFET  9  7  6         jf_IDEV09115		  
DBODY 7  9             d_IDEV09115		    

.MODEL mos_IDEV09115 nmos (vto=3.28 KP=0.0000425 LAMBDA=0.15 RD=0.095 RS=0.095)
.MODEL jf_IDEV09115  njf  (VTO=-7.96145 BETA=2.81 LAMBDA=.1 Rd=0 Rs=0)
.MODEL d_IDEV09115  d    (CJO=153p RS=0.65 VJ=1.7 M=0.41 BV=110)

.ENDS

